| 摘要 |
PURPOSE:To reduce the leakage current of a semiconductor integrated circuit device by a method wherein the bottom of a trench is constructed of thick oxide film region, and width of the oxide film region thereof is made broader than width of the opening part of the trench region. CONSTITUTION:At two adjoining N-type regions 34, 34', because an oxide film region 32 and a P<+> type diffusion region 33 are extended large in the lateral direction, the lower part 46 of a trench region is long, and the flowing path of a leakage current il is elongated sufficiently. Namely, because width of the opening of the trench part is about 1.5mum, depth is 5mum and width of the under part of the trench is about 3mum, the substantial distance between the regions 34, 34' is elongated to the degree of three times of the usual distance for the sake of elongation of the distance in the depth direction and owing to film thickness of the oxide film 32 differed from the usual films. Accordingly, the size becomes the same with the one according to a gentle rule of three times in length by using the same design rule, and the leakage current can be also reduced to a nearly negligible grade. |
