| 摘要 |
PURPOSE:To uniformly develop a lower layer resist layer by forming an interposing film consisting of a material which is insoluble in a solvent for an upper layer resist and is dissolved in a developing soln. for forming the pattern of the upper layer resist, then forming the upper layer resist thereon. CONSTITUTION:A PMMA film 2 is coated and formed as the lower layer resist on the surface of a semiconductor substrate 1 and an aq. PVA soln. is dropped and is spin-coated thereon to form a PVA film 3 as the interposing film. A positive type resist essentially consisting of a novolak resin is further coated thereon to form the upper layer resist 4, then an aperture 5 is opened to the upper layer resist 4. The upper layer resist 4 acts as a mask and the lower layer resist 2 is selectively exposed through the aperture 5 when <=250nm wavelength light is irradiated over the entire surface. The resist is developed by a toluene to selectively remove the lower layer resist 2 and the aperture 5A of a high aspect ratio through the lower and upper layer resists 2, 4 is obtd. The pattern having excellent uniformity is thus patterned and formed without generating the uneven development of the lower layer resist. |
