| 摘要 |
PURPOSE:To shorten the treating time, and to improve controllability by each generating plasma previously under different conditions in a plurality of treating chambers, moving a sample in a treating space and executing different plasma treatment. CONSTITUTION:Two etching treating chambers 3 are installed, and a connecting section 1 in which a sample 4 can be shifted in a vacuum is mounted between these chambers 3. Consequently, the sample is treated at multistages in different plasma without changing over introducing gases to the treating chambers 3 and readjusting discharge conditions, such as gas pressure, incident power, etc. Accordingly, the treating time is shortened, and controllability is improved.
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