| 摘要 |
PURPOSE:To stably form a vapor deposited film having high performance without contamination by providing electric field lens electrodes for controlling the incidence of an electron beam and an auxiliary electrode for controlling the current density of the electron beam to a thin film forming device by a vacuum deposition method, etc. CONSTITUTION:A metallic material for vapor deposition is put into a crucible 1 in a vessel subjected to evacuation to a vacuum and is melted to metallic vapor which is ejected onto a substrate in a vessel subjected to evacuation to a vacuum on the outside of the crucible so that a thin metallic film is deposited by evaporation on the substrate. The electric field lens electrodes 7a, 7b are disposed between a filament 6 for releasing the electron beam to melt the metallic material in the crucible of the above-mentioned device and a nozzle 4 for ejecting the metallic vapor in the crucible to converge the electron beam. A positive bias voltage is impressed to the electrodes 7a, 7b facing the filament 6 to irradiate the electron beam from the ejection port 4 of the crucible directly to the metallic material to melt 5 said material. The molten metal is evaporated and ejected from the nozzle 4. The density of the ejected metallic clusters 5a is increased by the auxiliary electrode impressed with a negative voltage. The thin metallic film by ionization with the electron beam is thus formed without contamination by the crucible material.
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