发明名称 Secondary metallization by glass displacement in ceramic substrate
摘要 A process for increasing electrical conductance of a metallization on a ceramic substrate wherein the metallization is an intermixture of continuous phases of refractory metal and glass which comprises contacting the refractory metal with an electrically conductive intrusion metal and heating the resulting structure to a temperature at which the glassy phase is fluid, the refractory metal is solid, and the intrusion metal is liquid whereby the liquid metal preferentially wets the refractory metal, migrates into the metallization displacing glass and, upon subsequent solidification, partially or wholly occupies the volume space originally containing the continuous glass phase.
申请公布号 US4684446(A) 申请公布日期 1987.08.04
申请号 US19850780137 申请日期 1985.09.26
申请人 GENERAL ELECTRIC COMPANY 发明人 CHARLES, RICHARD J.;MITOFF, STEPHAN P.;PASCO, WAYNE D.
分类号 C04B41/52;C04B41/89;H05K1/03;H05K1/09;H05K3/24;(IPC1-7):H05K3/10 主分类号 C04B41/52
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