| 摘要 |
PURPOSE:To form the fine patterns of resists for upper and lower layers by exposing a foundation mark, baking the fine pattern to the resist having low sensitivity for the upper layer and developing the resist having high sensitivity for the lower layer. CONSTITUTION:A lower-layer positive resist 4 is applied onto a foundation 2, and baked, and an upper-layer positive resist 3 is applied and baked. Only a positioning section is exposed and developed by a mask using only a positioning pattern section as a bored section, and an opening section 8 for a resist pattern is shaped. An element region is positioned, exposed and developed, and a fine pattern is formed to the resist 3. Since the resist 4 has sensitivity of several times as high as the resist 3 at that time, the resist 4 is developed easily, thus forming a fine pattern 5. |
