Ion implanted CMOS devices

摘要

A CMOS structure and method of manufacture are disclosed for achieving a high packing density in integrated circuits. Each device includes at least one high concentration surface region, (18 and 20) and at least one lower concentration background region (15 and 17) which permit the devices to be made close together. The devices can be fabricated with a single mask by using a lift-off technique in accordance with the method of the invention.