| 摘要 |
PURPOSE:To realize self-alignment between source and gate regions with high reproducibility, by superposing first, second and third semiconductor films on a substrate, etching a gate region to form a recess so as to reach an intermediate depth of the second semiconductor film and forming a buried gate electrode through a fourth semiconductor film serving as resistance. CONSTITUTION:An n<+> type amorphous silicon (a-Si) film 3 (the first semiconductor film) having a high concentration of impurity is deposited on a substrate 1 provided with a drain electrode 2 so that the a-Si film 3 provides a drain region. An n<-> type a-Si film 4 (the second semiconductor film) having a low concentration of impurity and a high resistance is deposited thereon so as to provide a channel region. An n<+> type a-Si film 5 (the third semiconductor film) having a high concentration of impurity is formed on the surfaces of a projection so as to provide a source region. An undoped a-Si film 7 (the fourth semiconductor film) is formed over the side walls and the bottoms of a recesses 6 and a gate electrode 8 is also formed within the recesses so as to provide a Schottky barrier for the a-Si film 7. A source electrode 9 is provided on the n<+> type a-Si film 5 in the source region.
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