| 摘要 |
PURPOSE:To prevent the generation of an erroneous operation of a memory circuit caused by alpha rays by a method wherein the semiconductor substrate, having a semiconductor region constituting a memory circuit, is die-bonded on the prescribed region, a wire bonding for external connection is performed, and process wherein a selected resin material will be bonded is provided. CONSTITUTION:A P-type silicon semiconductor substrate 61 is die-bonded on the prescribed position of a package, and after a bonding wire 62 has been adhered by a wire bonding which is performed for external connection, polyimide resin or polyimide-isoindoloquinazolinedione resin (PII resin) 63 is bonded, and heat treatments are performed as follows: at the temperature of 200 deg.C for 1hr, at 350 deg.C for 1hr, and at 450 deg.C for 10min, for example. The thickness of the PII resin film is about 40-70mum. It is desirable that an insulating film 61 is extended to a scribe region 64. The number of soft errors generating on the semiconductor substrate F whereon the PII resin film of 20mum is coated can be reduced to about 1/10<4> when compared with the semiconductor substrate E.
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