TISIN MATERIAL LAYER-CONTAINING PHASE-CHANGE MEMORY UNIT AND MANUFACTURING METHOD THEREFOR

摘要

Provided in the present invention are a TiSiN material layer-containing phase-change memory unit and a manufacturing method therefor. The phase-change memory unit comprises a phase-change material layer and a lower electrode arranged thereunder. The phase-change material layer and the lower electrode are connected therebetween by a TiSiN material layer. The lower electrode comprises a bottom part and a sheet-shaped side part connected to the bottom part. The sheet-shaped side part is perpendicular to the bottom part and forms a blade structure. The top part of the sheet-shaped side part is in contact with the TiSiN material layer. The present invention employs annealing to increase electrode die size thus reducing overall component resistance, and forms the TiSiN material layer on the top end of the lower electrode thus reducing an effective operating area. Application of the phase-change memory unit of the present invention in a phase-change memory device provides the advantages of low power consumption, high density, and high data retention capacity.