| 摘要 |
PURPOSE:To remarkably improve a switching speed with a small element size and high extinction ratio by constituting a titled switch of a semiconductor region 1 and a semiconductor region 3 which is not adjacent to said region but is adjacent to a semiconductor optical waveguide region 2 and is opposite from the region 2. CONSTITUTION:A P-InGaAsP layer 2, an N-InP layer 3 and a gap layer 13 are successively formed on a Zn-diffused region 7 formed to part of the surface layer of an N-InP substrate 1 and further Zn is diffused to part of the layers 3, 13 to form a current blocking region 8. The layers 2, 3 are then partly etched off to form ridge type optical waveguides 9, 10 to a projecting shape; thereafter, electrodes 4, 5, 6 are deposited by evaporation to complete the 2X2 terminal optical switch. Light is made incident on an incident terminal and the response delay at exit terminals 16, 17 is <=0.5nsec. The switching speed is thus remarkably improved with the small element size and high extinction ratio.
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