| 摘要 |
The detector of the invention comprises a first detection plate 12 of type p or n semiconductor, with type n or p zones 8, and a second plate 15 for processing the signals delivered by the plate 12 exposed to infrared radiation. The plate 12 is a parallelpipedal block. The zones 8 of the plate 12 are connected to associated metallisation regions 16 of the plate 15 by flexible contact terminals 9 integrated with the plate 12 via one end 13 and welded to the plate 15 via the other end 14. The invention makes it possible to obtain an infrared detector for a camera, quick and economical to manufacture and with no impairment of the semiconductor material. <IMAGE> |
