| 摘要 |
PURPOSE:To obtain a semiconductor laser which has low noise, high output and ready manufacture by utilizing the easiness of selective crystals mixture in a multiplex quantum well layer to completely independently set a lateral optical guide region and a current injection region. CONSTITUTION:A P-type clad layer 12 and a multiplex quantum well layer MQW 13 are laminated on a P-type compound semiconductor substrate 1, and a focused beam of Si ion is selectively injected except a stripe of 2-3mum of width. Thereafter, a P-type optical guide layer 14, an active layer 15, an N-type optical guide layer 16 and a multiplex quantum well layer 17 are laminated, and a focused beam of Be ions is selectively injected except a stripe of 4-6mum of width. Then, an N-type clad layer 18 and an N-type cap layer 19 are laminated. Selectively crystal mixed MQW 13, 17 provide not only lateral refractive index but also MQW 13 becomes an N-type for implanting Si ions and MQW 17 becomes P-type for implanting Be ions, and performs a current narrowing function. As a result, a design of more degree of freedoms can be performed. |
