| 摘要 |
PURPOSE:To enhance the precision of pattern transfer using an X-ray exposure mask by a method wherein the opening regions among X-ray absorbent patterns are filled with a resin material and the X-ray absorber patterns and the resin material layer are held between X-ray transmitting thin films. CONSTITUTION:An Si3N4 film is deposited on the surface of one side of the surfaces of an Si substrate 11 by a CVD method, the prescribed regions of the Si3N4 film are etched using a resist pattern as a mask to form Si3N4 film patterns 12 and thereafter, the resist is removed. Then, an X-ray transmitting thin film 13 of SiNx, BN or the like is deposited on the other surface of the substrate 11 and X-ray absorber patterns 14 are formed hereon using such a heavy metal as W or Ta. Then, after a thermosetting resin is coated on the absorber patterns 14, filled in the opening parts among the absorber patterns and flattened, a cured resin material layer 15 is formed. Then, after an X-ray transmitting thin film 16 of SiNx, BN or the like is deposited on the surface of the resin material layer 15, the prescribed region of the Si substrate 11 is removed with an anisotropic etching liquid using the Si3N4 films 12 as protective films. Thereby, a high-accuracy pattern transfer becomes possible because the X-ray exposure mask has a high effective mask contrast. |
