发明名称 BIAS SPUTTERING DEVICE
摘要 PURPOSE:To form a magnetic film having excellent magnetic characteristics on a substrate at high speed by a method wherein a constitution, with which the application voltage of the substrate is properly controlled in accordance with the surface roughness of the magnetic film, is provided. CONSTITUTION:The laser beam projected on the magnetic film 11, which is being grown on the surface of a substrate 6, by performing a bias sputtering is reflected on the surface of the substrate, and the density of irradiation of a light-receiving device 8 is changed in accordance with the surface roughness of the magnetic film 11. Said irradiation density is converted to voltage in the light-receiving device 8, and it is sent to a control device 9 through a wiring 10. The voltage corresponding to the proper surface roughness of the magnetic film 11 is inputted to the control device 9 in advance, and when the surface roughness is flat as compared with the voltage signal sent from the light-receiving device 8, the voltage to be applied to the power source 5 for substrate bias is reduced, and the application voltage is increased when the degree of surface roughness is increased by controlling the control device 9. As a result, the shape of the pole-like structure of the magnetic film 11 is properly formed, and the magnetic film 11 can be formed at high speed while the prescribed surface roughness is being maintained.
申请公布号 JPS62172708(A) 申请公布日期 1987.07.29
申请号 JP19860013864 申请日期 1986.01.27
申请人 TOSHIBA CORP 发明人 OSAWA YUICHI
分类号 G11B5/31;C23C14/40;C23C14/54;H01F41/18 主分类号 G11B5/31
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