| 摘要 |
PURPOSE:To realize a light-weight solar cell, which has high efficiency and large mechanical strength and cost of which is low, by forming a first layer having approximately the same crystal lattice constant as a GaAs or AlGaAs single crystal substrate and a large rate of etching by an etching liquid, a second layer of first conductivity type having approximately the same crystal lattice structure as the substrate and small light absorption, and third and fourth layers of second conductivity type having large light absorption on the substrate in a succession, shaping a fifth layer consisting of a comparatively light-weight reinforcing material onto the fourth layer and removing the first layer through etching. CONSTITUTION:An AlAs or Alx1Ga(1-X1)As layer 2, a p-type Alx2Ga(1-x2)As layer 3, a p-type GaAs layer 4 and an n-type GaAs layer 5 are grown on a GaAs substrate 1. An amorphous Si layer 6 having low resistivity is shaped as a reinforcing material layer. The AlAs layer 2 is removed through etching, and a growth layer section 10 is isolated from the GaAs substrate 1. A p-side grid electrode, an antireflection film and an n-side electrode are formed in the isolated growth layer section 10, thus completing a solar cell. |
