| 摘要 |
PURPOSE:To improve photoelectric conversion characteristics further by making forbidden band width in the vicinity of the interface with a crystallite mixing film of an (i) layer wider than that of the central section of the (i) layer. CONSTITUTION:The forbidden band width of an (i) layer in a photoelectric conversion active region for a thin film solar cell is widened in the vicinity of the interface with a crystallite mixing film (an addition layer), thus preventing a diffusion to the addition layer of free carriers generated in the vicinity of the interface with the addition layer of the (i) layer. Forbidden band width is controlled by using an amorphous material having wide forbidden band width such as a-SixC1-x:H and an a-SixN1-x:H film, and the amorphous material is applied, changing a composition ratio to silicon of an alloy material such as carbon and nitrogen. Potential barriers are shaped near both interfaces of a (p) layer 5 and an (n) layer 6 in the graph showing the energy band structure of the solar cell forming potential barriers, but a large effect is acquired even when potential barriers are shaped only on the incident side of beams according to the characteristics of a cell, the spectrum of a light source, etc. |
