发明名称 PROCESS FOR VAPOR-PHASE SYNTHESIS
摘要 PURPOSE:To produce a disk-shaped raw material with simple operation in high yield, by arranging a columnar base consisting of the same material as vapor-phase synthesized crystal in a reaction zone and depositing crystal on the base. CONSTITUTION:A columnar ZnSe base cut out from a plate crystal of ZnSe is fixed to a supporting tool and placed in a reaction zone for vapor-phase synthesis. The base is heated with a heater and maintained at a temperature higher than the synthesis temperature. The surface of the ZnSe crystal of the base is sublimed and cleaned by this process. The temperature of the base is lowered to the critical level for the synthesis and Zn vapor is introduced together with H2Se gas and a carrier gas into the reaction zone preferably rotating the crystal. A uniform columnar ZnSe crystal can be deposited on the base by this process. The obtained crystal is machined to a prescribed diameter and sliced to obtain a disk-shaped ZnSe raw material in high purity with simplified polishing process of the circumference of the disk.
申请公布号 JPS62171989(A) 申请公布日期 1987.07.28
申请号 JP19860009877 申请日期 1986.01.22
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KAMIGUCHI AKIHIRO
分类号 C30B29/48;C23C16/30;C23C16/44;C30B25/02;C30B25/20 主分类号 C30B29/48
代理机构 代理人
主权项
地址