发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To reduce power consumption at standby by operating standby functions on a C-MOS sense amplifier also. CONSTITUTION:A standby signal 6 goes to a low level at the normal operation, P-channel MOS transistors (TRs) 27, 28, 29 are conductive, a signal 26 is outputted by a signal 25. The signal 6 goes to a high level, the TRs 27, 28, 29 are nonconductive at the standby, the current path is cut off and even when the signal 25 is inputted, the operation is disabled. The TR 29 and an N-channel MOS TR 32 are nonconductive and the signal 26 is in floating state, then the signal 26 is fixed to a low level via the N-channel MOS TR 33 added to the output stage. Thus, no wasteful current flows to the sense amplifier and the power consumption is reduced.
申请公布号 JPS62170093(A) 申请公布日期 1987.07.27
申请号 JP19860013074 申请日期 1986.01.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMASHITA MASAYUKI
分类号 G11C11/41;G11C11/34;G11C11/419 主分类号 G11C11/41
代理机构 代理人
主权项
地址