发明名称 PLASMA TREATMENT DEVICE
摘要 PURPOSE:To make a plasma treatment over the entire surface of a substrate uniform by providing means for changing the direction of the generated magnetic field with time to a magnetic field generator. CONSTITUTION:A power source 16 is so set that the Miller magnetic field 10 having prescribed intensity is formed. The plasma 14 of a high density is formed and the plasma is confined into the prescribed space by the Miller magnetic field 10 when microwaves are supplied through waveguides 11, 12 into a chamber 1. The argon ions in the plasma sputter a film forming material from a cathode 6 when electric power is impressed to the cathode 6 to apply said power to the high-density plasma 14. The electric currents flowing in electromagnetic coils 8, 9 are periodically inverted so that sputtering by plasma is uniformly executed. the film having a uniform thickness is formed on the substrate 5 by the above-mentioned mechanism.
申请公布号 JPS62170475(A) 申请公布日期 1987.07.27
申请号 JP19860012109 申请日期 1986.01.24
申请人 HITACHI LTD 发明人 SANO HIDEZO;SAITO YUTAKA;SUZUKI YASUMICHI
分类号 C23C14/34;C23C16/50;C23C16/511;C23F4/00 主分类号 C23C14/34
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