| 摘要 |
PURPOSE:To form a protecting film which can effectively prevent a contaminant from entering from an exterior without adverse influence to the electric characteristics of a semiconductor element and suppress a crack occurring due to a thermal stress by depositing a part of the protecting film by a bias sputtering method. CONSTITUTION:A wiring layer 2 of an aluminum alloy is formed on a semiconductor substrate 1, and a silicon nitride film 3 is formed thereon. In this case, the film 3 is formed by a bias sputtering method. That is, the silicon nitride is used as a target, argon gas and nitrogen gas are used as sputtering gas to sputter the substrate 1 by a bias voltage. Even if an irregular surface exists on the layer 2, the silicon nitride film of flat shape is obtained by the features of the bias sputtering method. |
