| 摘要 |
PURPOSE:To form a capacitor structure of large capacity in a relatively small occupying area by forming the two electrodes of the capacitor of a plurality of thin layers, disposing the thin layer through an insulating layer in multilayers, and alternately disposing the thin layers attached to the two electrodes. CONSTITUTION:Two opposed electrodes of a capacitor are formed of thin pieces of a plurality of layers, the thin pieces are alternately stacked, and formed in a structure that the thin pieces are coupled with different wiring conductors 9, 10 at every other piece. Since charges are stored between the thin piece electrodes in this structure, huge capacity is provided. For example, the thickness of a polycrystalline silicon film 25 is 500Angstrom , the thickness of a molybdenum film 28 is 300Angstrom and the thickness of a silicon oxide film 26 is 100Angstrom . When the films 28, the film 26, the film 25, the film 26, the film 28,... are sequentially superposed to form 2mum of entire thickness, a capacity of approximately 40 times as large as the case of one layer of the conventional one is performed. |
