| 摘要 |
PURPOSE:To accelerate the response speed of a semiconductor device by composing a protecting diode of a diffused region formed on a semiconductor substrate and a Schottky barrier diode formed in the diffused region to reduce the reverse recovery time of the diode. CONSTITUTION:An epitaxial layer 4 is grown on one conductivity type semiconductor substrate of a semiconductor device 1, and a separating diffused region 9 is formed in the hole of one conductivity type thermal oxide film 12 formed on the layer 4. A first diffused region 5 is formed through the hole of the film 12, and a reverse conductivity type diffused region 7 to one conductivity type diffused region 8 is formed on the periphery of the region 5. A Schottky electrode 6 is formed on the inside periphery of the region 7 as a protecting diode 2, and an ohmic electrode 10 is bonded to the region 8. A base electrode of one conductivity type diffused region 11 and an emitter electrode of reverse conductivity type diffused region 13 are formed in the holes of the film 12 on the layer 4 of a transistor TR3 separated by a region 9 to reduce the reverse recovery time of a diode 2. |
