SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To attain high speed reading and the decision of depth of write by providing two sense amplifies of static type and dynamic type as sense amplifiers receiving a read voltage of a memory array. CONSTITUTION:A precharge MOSFET Q16 is provided to apply read operation of dynamic system to a common data line CD of a memory array M-ARY, an inverting operation mode signal uh and a precharge signal phip are fed to the gate and the FET Q16 is turned on by the signal phip only at the read by the dynamic system to precharge a data line CD. On the other hand, a reference voltage Vr from a connecting point between MOSFETs Q24 and Q23 is fed to a gate of a MOSFET Q18 and in reading the MOSFETs Q17, Q18 at the static mode, an OR signal between the precharge signal phip an the operating mode signal uh is fed to the gate of the precharge MOSFET Q24.