| 摘要 |
PURPOSE:To improve the quality of a deposit film by supplying the connecting sections of each reaction vessel with hydrogen gas, making the pressure of the connecting sections lower than pressure in respective reaction vessel and preventing the mutual mixing of mixed gases in each reaction vessel. CONSTITUTION:Reaction chambers 21, 22, 23 and a winding tank 30 are evacuated, and SiH4, a hydrogen gas base, B2H6 and H2 are each introduced into the chamber 21 at the predetermined flow rates, SiH4 and H2 into the chamber 22 at the prescribed flow rates and SiH4, the hydrogen gas base, PH3, and H2 into the chamber 23 at the fixed flow rates. Intermediate tanks 25, 26 are supplied with H2 gas by feeders 32. The flow rates of the feeders 32 are controlled by a pressure controller. High-frequency energy at predetermined frequency is fed into the chambers 21-23, and plasma at a low temperature is generated. Consequently, P-type, I-type and N-type semiconductor films are each formed into the chambers 21, 22, 23. The pressure of the intermediate tanks 25, 26 is made lower than that of the chambers 21, 22, 23 at that time, thus improving the quality of the deposit films without scaling up a device.
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