| 摘要 |
PCT No. PCT/JP86/00599 Sec. 371 Date Jul. 27, 1987 Sec. 102(e) Date Jul. 27, 1987 PCT Filed Nov. 25, 1986 PCT Pub. No. WO87/03307 PCT Pub. Date Jun. 4, 1987.A synthesizing process for diamond by the chemical vapor phase growth method, characterized by converting an organic compound containing carbon, hydrogen and at least one of oxygen and nitrogen, to a gas phase, mixing the gas with hydrogen gas, decomposing the mixed gas by an energy of heat, electron beam, light, direct current glow discharge, alternating current glow discharge, or direct current arc discharge, and introducing the decomposed gas to the surface of a heated substrate (5) to deposit diamond on the surface of the substrate. |
