| 摘要 |
PURPOSE:To eliminate the need for masking on etching, and to simplify a process, in which a semiconductor layer and the like are patterned and isolated, by isolating a deposit film according to a desired pattern through etching by oxidation reaction of a substance constituting the deposit film and a gaseous halogen group oxidant. CONSTITUTION:A gaseous halogen group oxidant is introduced from a gas introducing port 302 and a gaseous source material through a solenoid valve from a gas introducing port 303 to a gas transport tube 301 having a multitubular structure. A deposit film is formed in a limited region in a base body fixed on a stage by the gaseous raw material and the halogen group oxidant discharged from a nozzle-shaped gas discharge opening for the gas transport tube 301. The flow rate of the gaseous raw material is reduced or stopped, and the deposit film is isolated through etching by the halogen group oxidant. |
