| 摘要 |
PURPOSE:To increase an etching rate, and to improve the selection ratios of a foundation and a resist by applying high-frequency power to either one of a first electrode and a second electrode and low-frequency power to the other under the state in which a DC power supply is connected to a third electrode or the third electrode is grounded in an apparatus in which the third electrode is mounted between the oppositely faced first and second electrodes. CONSTITUTION:A first electrode 2 and a second electrode 3 are arranged to upper and lower sections in a reaction vessel 1, and a third electrode 4 is fitted between these electrodes 2 and 3. The third electrode 3 is hollowed, and has a downward gas outflow opening while a gas introducing tube 5 is connected to the third electrode. A high-frequency power supply at 13.56MHz is connected to the first electrode 2 and a low-frequency power supply 7 at 380kHz to the second electrode 3 respectively. A material to be etched 8 is placed on the first electrode 2. The third electrode consists of carbon having 5mm thickness and a diameter of 250mm, approximately seventy holes having approximately 3mm diameters are formed within the range of a radius of 60mm from the center, and the third electrode is grounded electrically. With the material to be etched 8, a phosphorus silicate glass film in approximately 1mum is shaped on an silicon substrate by a decompression vapor-phase growth device, and a resist pattern is formed on the film.
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