| 摘要 |
PURPOSE:To obtain an optical information recording member superior in heat resistance, humidity resistance, recording properties, and erasing properties, by providing a thin film structure which is mainly made of Te, Ge, Se, and Pd with a specific ratio of number of atoms of Te, Ge, and Se and a specific value of density of Pd. CONSTITUTION:A recording layer is a composition of a Te-Ge-Se-Pd series, and in a material of the recording layer, the ratio of number of atoms of Te, Ge, and Se is within the area connecting the points A1, B1, C1, D1, and E1 as shown in the figure and the density of Pd is 5-30atom%. An excess Te is fixed as a Pd-Te by adding Pd to a Te-Ge-Se series of high crystallization transition point temperature. Namely, Ge and Pd form compounds of GeTe, PdTe2 and the effect of the compounds results in the enhanced speed of crystallization. Pd forms compounds of Pd2Te and PdTe with Te, and in the Pd-Te series of 50% or more Te density, the compounds of Pd2Te and PdTe have the melting points respectively 740 deg.C and 720 deg.C. It can be considered that the effect of Se lowers the melting point of the film. Therefore, the excess Te can be fixed without changing the melting point of the film of base material of Te due to addition of Pd. |
