| 摘要 |
PURPOSE:To improve the efficiency by restraining a reactive current at the operation by composing one conductivity type region on the substrate side for forming a P-N reverse junction out of a double hetero junction structure in which an intermediate semiconductor layer is made a trap of minority carriers. CONSTITUTION:On an N-type InP substrate 1, an N-type InP confinement layer 2, a non-doped InGaAsP active layer 3, a P-type InP confinement layer 4 are grown in order by liquid-phase epitaxial growth technique and an SiO2 mask of stripe form is formed on the layer 4, followed by etching to form a mesa stripe structure in which a width of the active layer 3 is 2mum. Next, a P-type InP layer 5a, a P-type InGaAsP layer 5b, a P-type InP layer 5c, and an N-type InP layer 6 are grown in order by liquid-phase epitaxial growth technique and after removing the mask, a P-type InP layer 7, a P-type InGaAsP layer 5 are formed and P-side and N-side electrodes 9 and 10 are formed. |
