| 摘要 |
<p>The transistor comprises, in addition to a substrate (11) and three electrodes, gate, source and drain (13, 14, 15), at least one active layer (12) and two contact take-off regions (16, 17). To avoid the formation of a high-density electric field at the junctions between the active layer (12) of n type and the regions (16, 17) of n+ type, the transition material (18, 19) between active layer (12) and regions (16, 17) is doped with continuous gradual transition, from the n type near (20, 22) the active layer (12), to the n+ type near (21, 23) the contact take-off regions (16, 17). The gradual doping is done by focused ion-beam implantation. Application to hyperfrequency integrated power circuits. <IMAGE></p> |
