发明名称 DEVICE FOR LIQUID PHASE EPITAXIAL GROWTH
摘要 PURPOSE:To prevent an unnecessary deposit from sticking on a growing crystal and to obtain an excellent epitaxial growth layer by using a specified heat resistant sealing tube wherein both a support nested with a base plate and a housing vessel for a material supported freely slidably on the inside bottom surface of the support are housed. CONSTITUTION:A liquid phase epitaxial growth device is constituted of a support 9 wherein a base plate 10 is nested in one part of the inside bottom surface thereof, a housing vessel 13 for a material which is freely slidably supported on the inner bottom surface of the support 9 and has an aperture 14 in one part of the bottom wall and a heat resistant sealing tube 18 housing the support 9 and the housing vessel 13. In order to perform crystal growth, the base plate 10 is nested in the support 9 and a crystalloid material 19 is housed in the housing vessel 13 and the sealing tube 18 is slanted to one hand (a side 20) in such a state that the material 19 is melted. Thereby epitaxial growth is performed by transferring the housing vessel 13 to position the opening part 14 on the base plate 10 and bringing the melted material into contact with the surface of base plate. The housing vessel 13 is returned to an original position by slanting the sealing tube 18 to the other hand (a side 23) after the growth and the contact of the melted material 19 and the surface of the base plate 10 is broken.
申请公布号 JPS62158192(A) 申请公布日期 1987.07.14
申请号 JP19860001164 申请日期 1986.01.07
申请人 SUMITOMO METAL MINING CO LTD 发明人 ORAKU SATOSHI
分类号 C30B19/06;H01L21/208;H01L21/368 主分类号 C30B19/06
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