发明名称 MEASURING DEVICE FOR CHARACTERISTIC OF SEMICONDUCTOR LASER
摘要 PURPOSE:To remarkably shorten the man-hour for a measuring evaluation by applying a calculation processing to a characteristic which has been measured by using an injection current-optical output characteristic and an injection current-differential optical output characteristic. CONSTITUTION:Between an element for showing a single axis mode oscillation characteristic, and an element for showing a multiaxis mode oscillation characteristic, a difference is seen in an optical output injection current (L-I) characteristic, therefore, by utilizing a difference of this L-I characteristic, the element is selected roughly. In the vicinity of an oscillation threshold value, the L-I characteristic is pretty roundish. This characteristic is displayed by a graph by a differential optical output (dL/dI) - current (dL/dI-I) characteristic by taking a differentiation against a current of an optical output. On the other hand, when the same characteristic is measured with regard to the element which is oscillated by a single axis mode, the L-I characteristic is small in its roundness in the vicinity of the oscillation threshold value, the natural emission is migrated suddenly to a laser oscillation of an induced emission. When this characteristic is evaluated by the dL/dI-I characteristic, a value of dL/dI before the oscillation threshold value is decreased remarkably, comparing with the case of a multiaxis mode laser. Accordingly, by discriminating a difference of such a characteristic before the oscillation threshold value, the element for executing a single axis mode operation is selected roughly.
申请公布号 JPS62156577(A) 申请公布日期 1987.07.11
申请号 JP19850296938 申请日期 1985.12.27
申请人 NEC CORP 发明人 MITO IKUO;NISHIMOTO HIROYUKI;YAMAGUCHI MASAYUKI;TAKANO SHINJI;KOIZUMI YOSHIHIRO
分类号 G01R31/26;G01M11/00 主分类号 G01R31/26
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