| 摘要 |
<p>PURPOSE:To facilitate photolithography of high accuracy and a high yield and obtain stable threshold characteristics by selecting material of 2nd electrode layer for forming a barrier among specific metal materials except platinum. CONSTITUTION:An ohmic contact and a Schottky barrier are formed in the boundary between 1st electrode layer E1 and a semiconductor layer S and in the boundary between the semiconductor layer S and 2nd electrode layer E2 respectively and two such thin film diodes are connected electrically in parallel and in reverse to constitute a device. The material of the 1st electrode layer is not specifically limited but the material which facilitates the ohmic contact with the semiconductor or which provides a smaller barrier between the semiconductor and itself that the barrier between the semiconductor and the 2nd electrode layer is preferred. The 2nd electrode layer is made of at least one type of metal selected among titanium, molybdenum, tungsten, zirconium, vanadium, tantalum, rhenium, niobium, manganese, magnesium, copper, cobalt and strontium.</p> |
