| 摘要 |
PURPOSE:To realize integration including a controlling unit by a method wherein a means for applying a back gate voltage to a semiconductor, MOS-type transistor source and drain are connected to the same, a controlling means capable of applying a controlling voltage to their junction point is provided, and the controlling voltage is made variable for rendering the capacity value to vary. CONSTITUTION:A MOS-type transistor 10 provided with a source 11, drain 12, and gate 13 is formed on a semiconductor substrate 18, and a power source 14 applies a back gate voltage VBB to the semiconductor substrate 18. The source 11 and drain 12 are connected to each other and a controlling unit 15 is connected to their junction point for the application of a controlling signal. A gate.source capacity CGS exists between the gate 13 and source 11, a gate.drain capacity CGD between the gate 13 and drain 12, and a gate.bulk capacity CGB between the semiconductor substrate 18 and gate 13, all of which vary to the voltages in presence between the respective terminals.
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