PLASMA PROCESSOR

摘要

PURPOSE:To measure at good S/N ratio in a plasma processor by mounting an infrared spectroscope on one side and an independent plasma diagnosing infrared ray source on the other of a bell-jar for performing a plasma reaction of a plasma chemical vapor-phase deposition unit to obtain infrared rays having strong intensity. CONSTITUTION:A known infrared spectroscope body 9 and an independent infrared ray source 1 opposed through a bell-jar 12 to the body 9 are mounted on an elevationally movable trestle 11 on both sides of the bell-jar 12 for performing a plasma reaction. The light emitted from the source 1 is transmitted through a mirror system in a cover 4 and a slit 2 into a plasma in the bell-jar 12, and introduced by a mirror system in a cover 5 into the spectroscope 9. The optical path length from the source 1 to the spectroscope 9 can be shortened to approx. 1/2 by mounting the source 1. Thus, light having strong intensity can be introduced to measure at good S/N ratio.