| 摘要 |
<p>1,204,210. Aluminium oxide. RCA CORPORATION. 30 Dec., 1968 [19 Jan., 1968], No. 61677/68. Heading CIA. [Also in Divisions C7 and H1] A layer of aluminium oxide is formed on a substrate, i.e. a semi-conductor body, by forming a plasma between two electrodes in an oxygen atmosphere adjacent the substrate which has been coated with a layer of metallic aluminium and is charged with a voltage which is positive with respect to the anode of the plasma producing pair. In Fig. 3 a base-plate 66 is provided with orifice pipe 70 via which dome 68 may be evacuated or supplied with a desired atmosphere, and with three supports 72, 74, 76, 72 and 74 supporting the anode 78 and cathode 80 of a pair of electrodes which are during operation held at potentials of 0V and -750V respectively. Support 76 holds a carrier 82 for the semi-conductor substrate 10 which is biased during operation to a positive potential. In operation, the aluminium coated wafer 10 is placed in position, the dome 68 closed, evacuated and then an oxygen atmosphere of pressure 300 Á of Hg supplied, and the plasma ignited. The oxygen ions produced react with the Al to produce Al 2 O 3 . When oxidation is complete the wafer is removed.</p> |
