| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by forming an interlayer insulating film in a 3-layer structure of a silicon oxide film having a compression stress, a coated glass film and a silicon oxide film having a tensile stress to prevent wirings from being disconnected or corroded. CONSTITUTION:Lower layer aluminum wirings 3 are formed on an interlayer insulating film made of a PSG film 2 formed to cover a circuit element on a silicon substrate 1. Upper layer aluminum wirings 7 are formed through an interlayer insulating film formed of a first layer silicon oxide film having a weak compression stress such as a silicon oxide film (plasma silicon oxide) 4 formed by a plasma CVD method, a second layer coated glass layer 5, and a third layer silicon oxide film having a tensile stress such as a PSG film 6 formed by a normal pressure CVD method on the wirings 3. Thus, since the compression stress of the interlayer insulating film is very weak, the tensile stresses which acts on the lower and upper layer aluminum wirings are weakened, the wirings are not disconnected due to pulling.
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