| 摘要 |
PURPOSE:To improve the freedom of design by arranging a semiconductor plate close to a dielectric resonator, forming a light source for irradiating light with energy larger than the inhibited band width of the semiconductor plate on the semiconductor plate and electrically changing the optical output of the light source to change the oscillating frequency based on the photoconductive effect of the semiconductor plate. CONSTITUTION:When a control signal is impressed to the light source 15 through an input terminal 16 and light with energy larger than the inhibited band width of the semiconductor material is irradiated from the light source 15 to the semiconductor plate 4 mounted on the dielectric resonator 3, electron hole prasma is generated up to the depth corresponding to an optical output on the light source side of the semiconductor plate 4, a dielectric constant on the generating position is increased, the resonance frequency of the resonator 3 is changed, and the frequency is changed so as to be higher than reference frequency in a TE01delta mode to be usually used. Thereby, the depth of the electron hole prasma generated on the semiconductor plate 4 can be controlled and the oscillating frequency can be adjusted by controlling the optical intensity of the light source 15 based on the control signal.
|
