发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To highly integrate circuit elements by commonly connecting between the pectinated teeth of first power electrodes, between the pectinated teeth of first ground electrodes at a predetermined interval to hold a circuit by second power electrodes and second ground electrodes to reduce a crosstalk and to decrease the pattern occupying areas of the power and ground electrodes. CONSTITUTION:Pectinated first power electrodes 12 and first ground electrodes 13 are formed oppositely through insulating layers on a semiconductor substrate 11 on which circuit elements are formed so that pectinated teeth 12a-12e and 13a-13e are engaged with each other. A plurality of circuits 14 formed of circuit elements are formed on corresponding regions between the teeth 12a and 13a, between 12b and 13b of the substrate 11, and respectively connected with first power electrodes 12 and ground electrode 13, i.e., the corresponding teeth 12a-12b and 13a-13e. The pectinated teeth 15a-15c and 16a-16b of the second power electrode 15 and ground electrode 16 are formed at a predetermined interval to hold the circuits 14.
申请公布号 JPS62154647(A) 申请公布日期 1987.07.09
申请号 JP19850295821 申请日期 1985.12.26
申请人 SONY CORP 发明人 YAMASHITA NORIYUKI
分类号 H01L21/768;H01L21/3205;H01L21/82;H01L23/522 主分类号 H01L21/768
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