| 摘要 |
PURPOSE:To obtain stable and excellent differential characteristics by forming a differential amplifying element of plural high-output and high-frequency field effect transistors (FET) with high dielectric strength which are integrated on the same semiconductor substrate, and also employing multilayered wiring structure which connects those plural FETs equivalently in parallel and connecting them in common. CONSTITUTION:The differential amplifying element consists of the MOS FETs ML, MR, and MC which have high input impedance and are easily controlled with a voltage. The MOS FETs ML and MR in a differential couple consist of lateral type high-frequency power MOS elements with high dielectric strength. An n<-> type diffusion layer 21 averages the electric field between a channel area and an n<+> type diffusion layer 20 and is advantageous to an increase in the dielectric strength of the MOS elements. Further, the capacity between electrodes of a gate electrode GL (GR) and a drain area 2L (2R) is reduced and the frequency is also increased. Further, many 1-unit A differential amplifying elements composed of MOS FETs are arranged to obtain a high output, thereby obtaining a high-output and high-frequency element with high dielectric strength.
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