发明名称 |
PROCESS OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value. |
申请公布号 |
GB2150349(B) |
申请公布日期 |
1987.07.08 |
申请号 |
GB19840028534 |
申请日期 |
1984.11.12 |
申请人 |
* HITACHI LTD;* HITACHI MICROCOMPUTER ENGINEERING LTD |
发明人 |
AKIHIRO * TOMOZAWA;YOKU * KAINO;SHIGERU * SHIMADA;NOZOMI * HORINO;YOSHIAKI * YOSHIURA;OSAMU * TSUCHIYA;SHOZO * HOSODA |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/471 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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