| 摘要 |
PURPOSE:The titled device capable of precisely controlling etching depth in a monomo lecular layer unit, wherein a halogen gas or a hydrogen halide gas is adsorbed on surface of substrate crystal in a low-temperature zone and an element of group III is vaporized as a halide of the element of group III of III-V compound semiconductor in a high-temperature zone. CONSTITUTION:In a gaseous-phase etching device for III-V compound semiconductor such as GaAs, etc., a substrate holder 2 capable of transporting a reaction tube 1 in the longer direction in the interior of a reaction chamber of the reaction tube and a resistant heating means 4 to heat the interior of the reaction tube is set at the outside. Firstly, the substrate holder 2 is transferred, substrate crystal 3 is placed at a low-temperature zone 6 at the upper stream of the reaction tube, the temperature of the crystal is raised to desired temperature (600 deg.C) and HCl is fed to the zone and sufficiently adsorbed on the surface of the substrate crystal (first process). Then, the substrate crystal is transferred to a high-temperature zone 7 (600 deg.C) at the down stream and Ga is removed as GaCl from the surface of crystal (second process). The substrate crystal 3 is retransferred to the low-temperature zone 6 at the upper stream of the reaction tube. The above-mentioned processes are repeated by using this device so that the titled extremely precisely controlled etching can be carried out.
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