| 摘要 |
PURPOSE:To obtain a photodiode displaying stable short-circuit current and dark current values by forming a load electrode at a negative potential short- circuited to a P-type substrate onto an insulating film between an N<+> region and a P<+> channel stopper layer. CONSTITUTION:A P epitaxial layer 3 is formed onto a P<+> type Si substrate 2, and isolated by a P<+> layer 6, an N<+> light-receiving layer 5 is shaped, and the layer 5 is coated with a transparent SiO2 film 4. The film 4 is removed in one part 51 on the N<+> layer 5 and the surface end sections 61 of the isolation layers 6, Al is evaporated, patterning is conducted, and electrodes 9 are formed onto the SiO2 film 4 on the P layer surfaces 31 and an electrode 7 onto the opening section 51. An electrode 8 is shaped on the back of the substrate. Since the diode is coated with the Al electrodes 9, in which the P layer surfaces 31 are connected to the P<+> isolation layers 6, through the SiO2 film 4, the P layer 3, the P<+> isolation layers 6 and the SiO2 film 4 are brought to the same potential, the N-type inversion of the surface of the P layer 3 due to the migration of ions and the like in the SiO2 film is not generated, and leakage is prevented, thus improving the initial values of short-circuit currents and dark currents and stability under the state of operation.
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