| 摘要 |
<p>PURPOSE:To obtain a thin-film diode having stable characteristics by bringing the permittivity of at least one of electrode layers for the diode to 10% or less with respect to light beams having wavelengths of 300-800nm and eliminating the effect of external light beams. CONSTITUTION:A first electrode layer E1 consisting of Cr, Al, Mg, Ni, Cu, Ta, etc., is formed onto a substrate 1. The I-type monolayer or P-I-N type multilayer structure S of a semiconductor layer composed of a-Si:H, Se, etc., is superposed on it, not limited particularly. A second electrode layer E2 made up of Pt, Au, Pd, W, Ti, etc., shaping a barrier on the interface with the semiconductor layer is superposed. The permittivity of the electrode layers is specified by film thickness at that time, but 300Angstrom is selected in Cr. Ti and W, 500Angstrom in Al, Mg and Ni, 600Angstrom in Cu and 1,000Angstrom in Pt, Au and Ta as the standard of minimum film thickness. When 300-5,000Angstrom are selected in the E1 layer 0.1-5mum in the S layer and 300-5,000Angstrom in the E2 layer and the permittivity of at least one of the electrode layers is brought to 10% or less to beams having wavelengths of 300-800nm, photocurrents to external beams are inhibited, thus acquiring characteristics stable even under optical irradiation.</p> |
