| 摘要 |
PURPOSE:To avoid a short circuit between a semiconductor substrate and an impurity region caused by sintering even if a heating process is carried out after the formation of a metal wiring and improve the manufacturing yield of a semiconductor device by providing an insulating film which isolates the metal wiring from a junction surface between the semiconductor substrate and the impurity region. CONSTITUTION:After the surface of an N-type semiconductor substrate 11 is subjected to hot oxidation and an oxide film 14 is made to grow, the oxide film 14 is selectively etched and removed to expose a part of the surface of the semiconductor substrate 11 and a P-type impurity is introduced into the exposed semiconductor substrate 11 to form a base region 12. Then the base region 12 is covered with a CVD oxide film 18 and the film 18 is removed except the neighborhood of the oxide film 14. After that, high melting point metal is applied over the whole surface of the CVD oxide film 18 and the high melting point metal 18 is patterned to form a base electrode 15 by a lithography process and a silicon dioxide film is deposited to cover the base electrode completely. This silicon dioxide layer insulating film 16 is selectively removed by a lithography process and a part of the base region 12 is exposed.
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