CHEMICAL VAPOR DEPOSITION METHOD USING A FIRST GAS AND A SECOND TRANSITIVE GAS

摘要

A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.