| 摘要 |
PURPOSE:To capture floating electrons with a separation groove by forming a separation groove which is deeper than a groove-shaped capacitor between cell region and peripheral circuit region and connecting such groove to a power supply voltage. CONSTITUTION:A semiconductor substrate 1 has a cell region 2 and a peripheral circuit region 3. In the cell region 2, a memory cell which is formed by the groove-shaped capacitors 4, 5... which stores information in the form of charges and access transistors respectively disposed between the upper electrodes and election leads of capacitors 4, 5... is arranged, while in the peripheral circuit region, a power supply circuit, input/output circuits and address decoder, etc. are integrated. In the boundary region between the cell region 2 and peripheral circuit region 3, the separation groove 8 is formed extending into the substrate 1 deeper than the capacitors 4, 5... and the upper electrode of this separation groove 8 is electrically connected to the power supply voltage. Even when the floating electrons move within the substrate 1 and try to partly enter the cell region 2, these are captured by the separation groove 8 which is deeper than the groove-shaped capacitors 4, 5... and does not reach the cell region 2. |
