| 摘要 |
PURPOSE:To accurately anisotropically etch in a plasma processor by focusing the line of magnetic force of a Miller magnetic field through which a plasma is passed perpendicularly to a substrate near an electrode opposed to the substrate. CONSTITUTION:A high frequency voltage is applied to between an anode 11 and a cathode 15 to generate a plasma P between the anode 11 and the cathode 15. An annular magnet 19 is so mounted as to surround the anode 11, a magnet 21 is further mounted under a bottom plate 13b, and a Miller magnetic field M is formed in a chamber 13. The line H of magnetic force of the magnetic field is focused near the anode 11, and passed through the plasma P in a direction perpendicular to a substrate 23. A plurality of magnets 31 are arranged on the inner peripheral wall 13c of the chamber 13 so that poles are arranged laterally and longitudinally in a zigzag manner to form a multiplex bipole surface magnetic field for returning charged particles flown from the plasma P to the wall 13c of the chamber 13 to the plasma P. Thus, the substrate 23 can be accurately anisotropically etched.
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