| 摘要 |
PURPOSE:To enable abnormal characteristic due to a boundary problem between a silicon oxide film and a silicon substrate to be recovered effectively, by providing an ionizing radiation process to control the boundary surface level between the silicon oxide film and the silicon substrate. CONSTITUTION:Wafers having completed the prior process enter the characteristic inspection process 1, where they are subjected to a preset inspection. They are then sent to the following process as they are, and the defectives are selected out in a beta, VT defects selection process 2 to extract only those having abnormal characteristic. These extracted wafers receive a treatment to recover a normal characteristic, respectively with an appropriate amount of radiation in the ionizing radiation process 3, which are then returned back to the characteristic inspection process 1, whereby the recovery treatment result being checked, through which those determined as non-defective are sent to the following process, while those required for further retreatment are returned to the ionizing radiation process 3 again. The wafers whose recovery is determined as impossible are all disposed of, together with other defectives. Since the wafers having a defective characteristic can efficiently be recovered at the manufacturing stage as mentioned above, the production yield can greatly be improved.
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